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Ordering number : ENA0747B
2SK4125
N-Channel Power MOSFET
600V, 17A, 610m Ω , TO-3P-3L
Features
http://onsemi.com
?
?
?
ON-resistance RDS(on)=0.47 Ω (typ.)
Input capacitance Ciss=1200pF (typ.)
10V drive
Speci ? cations
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
VDSS
VGSS
ID
Conditions
Ratings
600
±30
17
Unit
V
V
A
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *2
Avalanche Current *3
IDP
PD
Tch
Tstg
EAS
IAV
PW ≤ 10 μ s, duty cycle ≤ 1%
Tc=25 ° C (Our ideal heat dissipation condition)*1
52
2.5
170
150
--55 to +150
78.8
17
A
W
W
°C
°C
mJ
A
* 1 Our condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
* 2 VDD=50V, L=500 μ H, IAV=17A (Fig.1)
* 3 L ≤ 500 μ H, single pulse
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7539-002
2SK4125-1E
Product & Package Information
? Package : TO-3P-3L
? JEITA, JEDEC : SC-65, TO-247, SOT-199
? Minimum Packing Quantity : 30 pcs./magazine
15.6
4.8
1.5
3.2
7.0
Marking
Electrical Connection
2
K4125
13.6
LOT No.
1
2.0
3.0
1.0
0.6
3
1
5.45
2
3
5.45
1 : Gate
2 : Drain
3 : Source
TO-3P-3L
Semiconductor Components Industries, LLC, 2013
July, 2013
62012 TKIM/D0507 TIIM TC-00001053/51607QB TIIM TC-00000701 No. A0747-1/7
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